UNIMET 1037

The UNIMET 1037 is a laboratory benchtop test system designed for discrete semiconductors, including bipolar transistors, IGBTs, MOSFETs, diodes, Zener diodes, triacs, and thyristors. It can be integrated with any standard handler through TCP/IP, IOs, or RS232 connections. Advanced dynamic measurements are enabled by the TA37.TIM extension.

Download the datasheet here

UNIMET 1037 allows fast and simple drag & drop test application development. Detachable TA37 can be used as well with M3000, UNIMET 3000 and UNIMET 2020. Testing discrete semiconductors has never been easier!

Features

Small footprint, easy to move
Connection to any type of standard handler via TCP/IP, IOs or RS232
Ligtweight design
Compatible with already written TA07D, T, F and Y tests
Testing in ranges 20V/100A, 600V/500mA, 52V/1A
HV07B extension compatibility for testing up to 2kV/19.5mA
On-board FPGA with AD/DA converters for advanced test control and DSP operation (Thermal resistance test, Dynamic resistance test, tRR*, tON*, tOFF* and tDELAY*)
*Optional TA37.TIM adapter required

Testing

Bipolar transistors
Field Effect Transistors
IGBTs
Diodes
Zenner diodes
Thyristors / triacs
Arrays

Tested parametres

DIODES & ZENNER DIODES

Forward voltage V_F
Reverse voltage V_R
Zenner voltage V_Z
Reverse leakage current I_R
Dynamic resistance DC R_dyn
Dynamic resistance AC R_z

BIPOLAR TRANSISTORS

Breakdown voltage V_CE0(BR)
Breakdown voltage V_CES(BR)
Saturation voltage V_CE(sat)
Saturation voltage V_BE(sat)
Collector/Emitter cutoff current I_CEO,I_CBO,I_EBO
Breakdown voltage V_CB0
Breakdown voltage V_EB0
Diode forward voltage V_F(diode)
On voltage V_BE(on)
DC current gain h_fe(DC)
AC current gain h_21e(AC)

MOS-FETS

Breakdown voltage V_(BR)DSS
Inverse diode voltage V_SD
Gate threshold voltage V_GS
On resistance R_DS(on)
Forward transconductance gfs
Forward/Reverse leakage current I_GSS
On voltage V_DS(on)
On-state drain current I_D(on)

Jiří Marek