Development and production of measuring equipment
EN CZ
HomeProductsSemiconductor TestersUNIMET 1037

Categories

UNITES Systems a.s.
Kpt. Macha 1372
757 01 Valašské Meziříčí
Czech republic
T: +420 571 757 230
E: e-mail contacts

UNIMET 1037

UNIMET 1037

UNIMET 1037 is laboratory benchtop test system for discrete semiconductors such as bipolar transistors, IGBTs,  MOSFETs, diodes, Zener diodes, triacs and thyristors. It could be easily connected with any type of standard handler via TCP/IP, IOs or RS232. Advanced dynamic measurements are available with TA37.TIM extension. 

Download the datasheet here

 

UNIMET 1037 allows fast and simple drag & drop test application development. Detachable TA37 can be used as well with M3000, UNIMET 3000 and UNIMET 2020. Testing discrete semiconductors has never been easier!

Features

  • Small footprint, easy to move
  • Connection to any type of standard handler via TCP/IP, IOs or RS232
  • Ligtweight design
  • Compatible with already written TA07D, T, F and Y tests
  • Testing in ranges 20V/100A, 600V/500mA, 52V/1A
  • HV07B extension compatibility for testing up to 2kV/19.5mA
    On-board FPGA with AD/DA converters for advanced  test control and DSP operation (Thermal resistance test, Dynamic resistance test, tRR*, tON*, tOFF* and tDELAY*)
    *Optional TA37.TIM adapter required

Testing

  • Bipolar transistors
  • Field Effect Transistors
  • IGBTs
  • Diodes
  • Zenner diodes
  • Thyristors / triacs
  • Arrays

Tested parametres

DIODES & ZENNER DIODES

  • Forward voltage VF
  • Reverse voltage VR
  • Zenner voltage VZ
  • Reverse leakage current IR
  • Dynamic resistance DC Rdyn
  • Dynamic resistance AC Rz

BIPOLAR TRANSISTORS

  • Breakdown voltage VCE0(BR)
  • Breakdown voltage VCES(BR)
  • Saturation voltage VCE(sat)
  • Saturation voltage VBE(sat)
  • Collector/Emitter cutoff current ICEO,ICBO,IEBO
  • Breakdown voltage VCB0
  • Breakdown voltage VEB0
  • Diode forward voltage VF(diode)
  • On voltage VBE(on)
  • DC current gain hfe(DC)
  • AC current gain h21e(AC)

MOS-FETS

  • Breakdown voltage V(BR)DSS
  • Inverse diode voltage VSD
  • Gate threshold voltage VGS
  • On resistance RDS(on)
  • Forward transconductance gfs
  • Forward/Reverse leakage current IGSS
  • On voltage VDS(on)
  • On-state drain current ID(on)

TRIACS & THYRISTORS

  • Gate trigger current IGT
  • Gate trigger voltage VGT
  • Off-state leakage current IDO
  • Latch current IL
     

TA37.TIM



AC Parameters

  • Reverse Recovery Time tRR
  • Turn-on time tON
  • Turn-off time tOFF

 

Contact: 

 Jiří Marek       

Jiří Marek

 

Scroll up