Effitest e50 series specification

Testing

• Bipolar transistors (also GaN and SiC)
• MOSFETs (also GaN and SiC)
• Diodes
• Zener diodes
• Voltage regulators
• LED, Optocouplers 
• Photodiodes
• Phototransistors 
• MOSFET Drivers
• IGBT Drivers
• Low pin count devices

Technical specification

• Effitest e50 max. ranges up to 800V/10A

• 1 CVI unit consists of - 2×VI sources 30V / 10A, HV source 800V / 100mA and Leakage current meter from 10nA range
• 2 four-quadrant and 1 two quadrant power supplies allow negative power bias on gate up to -30V (VI source) or -800V (HV source)
• One CVI board designed for testing up to 10-pin by using external multiplexer unit
• Parallel and Serial mode available
• Up to 32 HW bins and 256 SW bins
• Controlled by proven Windows 10 based IPC
• Small and compact power box - all the necessary power supplies in a 550mm x 170mm x 350mm box

Test time

• Bipolar transistors <35 ms
• Diodes <25 ms

Tested parameters

• Diode & Zenner diode: V_F, V_F2, V_F2AC, dV_F, dV_F/P, I_R, V_R, Z_Z
• Transistor: O/S, V_FBE, V_FBC, I_FBE, I_FBC, I_FEC, V_CESAT, V_BESAT, BV_EBO, BV_CBO, BV_CEO, BV_CER, BV_CES, BV_CEX, I_EBO, I_EBV, I_CBO, I_CEO, I_CER, I_CES, I_CEX, h_FE, I_B, V_BE, V_BEB, V_RCC, dV_BE
• FET: BV_DSS, BV_DSX, BV_DGO, BV_SGO, BV_SGS, I_DSS, HI_DSS, I_DSX, I_DSX-, I_DGO, I_SGO, I_GSS, I_GSX, I_DS(on),V_DS(on), R_DS(on), V_GS(on), V_GS(TH), V_SDS, V_SDSD, V_SD, V_P, dV_SD, G_MP, G_MI, G_MV, V_FGDO, V_FGSO, V_FGSS
• Optical: Dominant Wavelength, Peak Wavelength, CRI, CIE_XY, Luminous intensity, Radiant intensity

 

    Virtual scope feature

 

Measure ranges

Range	Resolution	Accuracy
+/- 30mV	1uV	±1,5%FSR
+/- 100mV	3uV	±0,5%FSR
+/- 300mV	10uV	±0,2%FSR
+/- 1V	30uV	±0,2%FSR
+/- 3V	100uV	±0,1%FSR
+/- 10V	300uV	±0,1%FSR
+/- 30V	1mV	±0,1%FSR
+/- 100V	3mV	±0,3%FSR
+/- 600V	18mV	±0,3%FSR
+/- 800V	24mV	±0,3%FSR

 

 

Range	Resolution	Accuracy
+/- 10nA	300fA	±3%FSR
+/- 100nA	3pA	±3%FSR
+/- 1uA	30pA	±1%FSR
+/- 10uA	300pA	±0,5%FSR
+/- 100uA	3nA	±0,3%FSR
+/- 1mA	30nA	±0,2%FSR
+/- 10mA	300nA	±0,1%FSR
+/- 100mA	3uA	±0,1%FSR
+/- 1A	30uA	±0,1%FSR
+/- 3A	90uA	±0,1%FSR
+/- 10A	300uA	±0,1%FSR

 

Features

• Easy to install and setup - less than 3 hours from create to test
• Connection to handler or wafer prober
• Very high speed test -  less than 35 ms to test a bipolar transistor
• Throughput up to 60,000 UPH
• Multisite and Carousel capability - split the test program in two to increase handler speed
• Virtual scope – internal instrument allowing display of measured parameters – voltages, currents, etc. with 100kHz sample rate
• Reduced hardware set - decreases maintenance costs
• SW auto calibration - calibration with external DMM available with one click
• Easy programming and debugging of test programs
• Configurable test head - one or two CVI’s can be placed on each test head
• Small and compact power box - all the necessary power supplies in a 550mm x 170mm x 350mm box
• Life-cycle support
• Final test & QA test ready

 

xtendability

(possibility to integrate measurement equipment from 3rd party vendors)

• LED Spectrometer
• LCR Bridge
• Light Emitter (when testing photo diodes)
• Converters for communication (ISELED, UART, I2C, etc.)
• etc.

Areas of application

• High volume production testing
• Quality control
• Failure analysis
• Engineering testing

 

Contact: 

 Ondřej Běťák