Product specifications
UNITES Systems a.s.
Kpt. Macha 1372
757 01 Valašské Meziříčí
Czech republic
T: +420 571 757 230
E: e-mail contacts
TA37 specification
Testing: Bipolar Transistors (NPN, PNP, Low power, Darlington, Field effect transistors (N-channel, P-channel, Power-MOS), Diodes, Zenner diodes, Arrays, 2000V optional.
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PARAMETERS - BIPOLAR TRANSISTORS
- Breakdown voltage VCE0(BR)
- Breakdown voltage VCES(BR)
- Saturation voltage VCE(sat)
- Saturation voltage VCB0
- Breakdown voltage VCB0
- Breakdown voltage VEB0
- Diode forward voltage VF(diode)
- Collector/Emitter cutoff current ICEO, ICBO, IEBO
- On voltage VBE(on)
- DC current gain hfe(DC)
- AC current gain h21e(AC)
PARAMETERS – TRIACS & THYRISTORS
- Gate trigger current IGT
- Gate trigger voltage VGT
- Off-state leakage current IDO
- Hold current IH
- Latch current IL
PARAMETERS – DIODES & ZENNER DIODES
- Forward voltage VF
- Reverse voltage VR
- Zenner voltage VZ
- Reverse leakage current IR
- Dynamic resistance DC RDdyn
- Dynamic resistance AC Rz
PARAMETERS – MOS-FETS
- Breakdown voltage V(BR)DSS
- Inverse diode voltage VSD
- Gate threshold voltage VGS
- On resistance RDS(on)
- Forward transconductance gfs
- Forward/Reverse leakage current IGSS
- On voltage VDS(on)
- On-state drain current ID(on)
TA37.TIM
AC Parameters
- Reverse Recovery Time tRR
- Turn-on time tON
- Turn-off time tOFF
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